Electron-electron interaction in the magnetoresistance of graphene.

نویسندگان

  • Johannes Jobst
  • Daniel Waldmann
  • Igor V Gornyi
  • Alexander D Mirlin
  • Heiko B Weber
چکیده

We investigate the magnetotransport in large area graphene Hall bars epitaxially grown on silicon carbide. In the intermediate field regime between weak localization and Landau quantization, the observed temperature-dependent parabolic magnetoresistivity is a manifestation of the electron-electron interaction. We can consistently describe the data with a model for diffusive (magneto)transport that also includes magnetic-field-dependent effects originating from ballistic time scales. We find an excellent agreement between the experimentally observed temperature dependence of magnetoresistivity and the theory of electron-electron interaction in the diffusive regime. We can further assign a temperature-driven crossover to the reduction of the multiplet modes contributing to electron-electron interaction from 7 to 3 due to intervalley scattering. In addition, we find a temperature-independent ballistic contribution to the magnetoresistivity in classically strong magnetic fields.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Quantum Interference Control of Ballistic Magneto- resistance in a Magnetic Nanowire Containing Two Atomic- Size Domain Walls

The magnetoresistance of a one-dimensional electron gas in a metallic ferromagnetic nanowire containing two atomic-size domain walls has been investigated in the presence of spin-orbit interaction. The magnetoresistance is calculated in the ballistic regime, within the Landauer-Büttiker formalism. It has been demonstrated that the conductance of a magnetic nanowire with double domain walls...

متن کامل

Conduction coefficient modeling in bilayer graphene based on schottky transistors

Nowadays carbon nanoparticles are applied on the island of single electron transistor and Nano-transistors. The basis of single electron devices (SEDs) is controllable single electron transfer between small conducting islands. Based on the important points in quantum mechanics, when a wave passes through several spatial regions with different boundaries, the wave function of the first region di...

متن کامل

Theoretical study of interaction between aspirine drug and Al-soped graphene nanostructure toward designing of suitable nanocarrier for drug delivery

Background: In recent years, the unique physical and chemical properties of carbon nanostructures has led to many advancements in various fields, including chemistry and pharmaceuticals. Graphene is one of the carbon nanostructures which have attracted significant attention from researchers in adsorption and release of various drugs. Due to the high surface area of graphene, it can be used as a...

متن کامل

Magnetoresistance in inhomogeneous graphene/metal hybrids

Related Articles Anomalous magnetoresistance and magnetocaloric properties of NdRu2Ge2 Appl. Phys. Lett. 102, 062406 (2013) Size effects in thin gold films: Discrimination between electron-surface and electron-grain boundary scattering by measuring the Hall effect at 4K Appl. Phys. Lett. 102, 051608 (2013) Peculiarity of magnetoresistance in high pressure annealed Ni43Mn41Co5Sn11 alloy Appl. Ph...

متن کامل

Electrostatics Modes in Mono-Layered Graphene

In this paper, we investigated the corrected plasmon dispersion relation for graphene in presence of a constant magnetic field which it includes a quantum term arising from the collective electron density wave interference effects. By using quantum hydrodynamic plasma model which incorporates the important quantum statistical pressure and electron diffraction force, the longitudinal plasmons ar...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:
  • Physical review letters

دوره 108 10  شماره 

صفحات  -

تاریخ انتشار 2012